It home understands that the patent abstract shows that the application provides a graphene field effect transistor, which relates to the field of semiconductor technology and can improve the output resistance of the device, thereby improving the switching ratio and achieving better RF performance. A graphene field effect transistor comprises a substrate, a first gate electrode, a second gate electrode, a first gate dielectric layer, a second gate dielectric layer, a channel layer, a source electrode and a drain electrode.
In addition, the material of the channel layer includes AB stacking double-layer graphene or AB stacking double-layer graphene A first gate electrode and a first gate dielectric layer are arranged on one side of the channel layer, and a second gate electrode and a second gate dielectric layer are arranged on the other side of the channel layer; the first gate electrode comprises a plurality of first sub electrodes arranged at intervals and a first connecting sub electrode; the extension direction of the first sub electrode intersects with the spacing direction of the source electrode and the drain electrode, and the first connecting sub electrode intersects with the drain electrode The first sub electrode and the second gate electrode are used to provide the longitudinal electric field perpendicular to the channel layer.
article links：Huawei Unveils "graphene field effect transistor" patent
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